Plasma Deposition of Amorphous Silicon-Based Materials
by Bruno, Giovanni; Capezzuto, Pio; Madan, Arun; Bruno, Giovanni; Capezzuto, Pio; Madan, A.-
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Summary
Table of Contents
| Chemistry of Amorphous Silicon Deposition Processes: Fundamentals and Controversial Aspects: Some Fundamentals on Plasma Deposition. | |
| Chemical Systems for Amorphous Silicon andIts Alloys. | |
| Effect of Novel Parameters. | |
| Deposition Mechanisms and Controversial Aspects. | |
| Diagnostics of Amorphous Silicon (a-Si) Plasma Processes: Optical Diagnostics. | |
| Mass Spectrometry and Langmuir Probes. | |
| In Situ Studies of the Growth of a-Si:H by Spectroellipsometry. | |
| Deposition Conditions and the Optoelectronic Properties of a-Si:H Alloys: General Comments on Amorphous Alloy Growth. | |
| Relationship between Mobility and Device Performance. | |
| Concepts of Electronic Transport in Amorphous Semiconductors. | |
| Summary and Conclusions. | |
| Reactor Design for a-Si:H Deposition: Power Dissipation Mechanisms in SiH4 Discharges. | |
| Material Balance and Gas-Phase and Surface Physicochemistry. | |
| Concepts of Reactors for a-Si:H Deposition. | |
| Summary and Conclusions. | |
| Optoelectronic Properties of Amorphous-Silicon Using the Plasma-Enhanced Chemical Vapor Deposition (PECVD) Technique: Effect of the Properties of a-SiH Due to Parametric Variations Using the PECVD Technique. | |
| Alternative Deposition Techniques. | |
| Surface States, Interface States, and Their Effect on Device Performance. | |
| Amorphous Silicon-Based Devices: Significant Advantages of a-Si in Its Alloys as a New Optoelectronic Material. | |
| Progress in Amorphous Silicon Solar Cell Technology. | |
| Integrated Photosensor and Color Sensor. | |
| Aspects of a-Si Imaging Devices Application. | |
| a-Si Electrophotographic Applications. | |
| Visible-Light Thin-Film Light-Emitting Diode (TFLED). | |
| Subject Index. | |
| (Chapter Headings): Chemistry of Amorphous Silicon Deposition Processes: Fundamentals and Controversial Aspects. | |
| Diagnostics of Amorphous Silicon (a-Si) Plasma Processes. | |
| Deposition Conditions and the Optoelectronic Properties of a-Si:H Alloys. | |
| ReactorDesign for a-Si:H Deposition. | |
| Optoelectronic Properties of Amorphous Silicon Using the Plasma Enhanced Chemical Vapor Deposition (PECVD) Technique. | |
| Amorphous Silicon Based Devices. | |
| Table of Contents provided by Publisher. All Rights Reserved. |
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