| Preface |
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xi | (4) |
| About the Authors |
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xv | |
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1 | (4) |
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1.1 The Principles of Photovoltaics |
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1 | (1) |
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1.2 The History of Photovoltaics |
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1 | (2) |
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1.3 The Importance of Photovoltaics |
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3 | (2) |
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5 | (4) |
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2.1 The Sun as a Source of Radiation |
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5 | (1) |
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6 | (3) |
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3 The Principles of Photovoltaics |
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9 | (40) |
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3.1 Crystalline Structure and the Energy Band Diagram for Semiconductors |
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9 | (11) |
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3.1.1 The Energy Band Diagram for Tetrahedronal Semiconductors |
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10 | (4) |
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3.1.2 Electrons and Holes in a Semiconductor |
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14 | (1) |
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3.1.3 Energy Levels: the Fermi Level |
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14 | (2) |
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3.1.4 Density of States for Electrons and Holes |
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16 | (3) |
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3.1.5 Thermal Equilibrium |
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19 | (1) |
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3.2 The Conduction Mechanism in Semiconductors |
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20 | (9) |
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3.2.1 Intrinsic Conduction, Field Current and Mobility |
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20 | (4) |
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3.2.2 Impurity Conduction |
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24 | (3) |
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3.2.3 Diffusion Current and Diffusion Constant |
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27 | (2) |
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3.3 The Generation of Charge Carriers by the Absorption of Light |
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29 | (5) |
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3.3.1 Absorption in Semiconductors |
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30 | (4) |
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3.3.1.1 Absorption in Direct Semiconductors |
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30 | (2) |
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3.3.1.2 Absorption in Indirect Semiconductors |
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32 | (2) |
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3.4 Recombination, Carrier Lifetime |
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34 | (10) |
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3.4.1 Radiative Recombination |
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35 | (1) |
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3.4.2 Auger Recombination |
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36 | (1) |
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3.4.3 Recombination via Defect Levels |
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37 | (5) |
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3.4.4 Recombination by Doping |
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42 | (2) |
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3.5 Basic Equations of Semiconductor Device Physics |
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44 | (5) |
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3.5.1 The Current Density Equations |
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44 | (1) |
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45 | (1) |
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3.5.3 The Continuity Equations |
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45 | (4) |
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49 | (18) |
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49 | (1) |
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50 | (9) |
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4.2.1 Potential Difference |
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51 | (3) |
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4.2.2 Electric Field and Electric Potential |
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54 | (3) |
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4.2.3 Space Charge Region Width and Capacitance |
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57 | (2) |
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4.3 The Biased p-n Junction |
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59 | (8) |
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4.3.1 The p-n Junction with Low Recombination and Weak Injection |
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60 | (1) |
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4.3.2 Forward Current Characteristic and Saturation Current |
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61 | (6) |
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5 The Physics of Solar Cells |
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67 | (20) |
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5.1 The Illuminated Infinite p-n Junction |
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67 | (5) |
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5.1.1 The Current-Voltage Characteristic of an Infinite Solar Cell |
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69 | (3) |
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5.1.1.1 Short Circuit Current |
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69 | (1) |
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5.1.1.2 Open Circuit Voltage |
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70 | (1) |
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71 | (1) |
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71 | (1) |
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72 | (15) |
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5.2.1 Photocurrents in a Real Solar Cell |
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73 | (3) |
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5.2.1.1 Photocurrent from the Base |
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73 | (2) |
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5.2.1.2 Photocurrent from the Emitter |
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75 | (1) |
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5.2.1.3 Photocurrent from the Space Charge Region |
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76 | (1) |
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5.2.2 Saturation Currents in a Real Solar Cell |
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76 | (3) |
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5.2.2.1 Saturation Current from the Base |
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76 | (2) |
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5.2.2.2 Saturation Current from the Emitter |
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78 | (1) |
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5.2.3 Ohmic Resistance in Real Solar Cells |
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79 | (1) |
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5.2.3.1 Shunt Resistance (R(p)) |
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79 | (1) |
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5.2.3.2 Series Resistance (R(s)) |
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79 | (1) |
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5.2.4 The Two Diode Model |
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79 | (8) |
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5.2.4.1 Equivalent Circuit of a Real Solar Cell |
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81 | (2) |
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5.2.4.2 The Influence of Ohmic Resistances |
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83 | (4) |
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6 High Efficiency Solar Cells |
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87 | (46) |
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6.1 The Significance of High Efficiency |
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87 | (3) |
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90 | (24) |
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6.2.1 Recombination Losses |
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90 | (12) |
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6.2.1.1 Recombination Losses in the Base |
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90 | (5) |
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6.2.1.2 Photocurrent and Saturation Current from the Emitter |
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95 | (3) |
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6.2.1.3 The Influence of Base Doping |
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98 | (3) |
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6.2.1.4 Recombination in the Space Charge Region |
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101 | (1) |
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6.2.2 Ohmic Resistance Losses |
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102 | (12) |
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6.2.2.1 Contact Resistance Metal-Semiconductor |
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103 | (7) |
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6.2.2.2 Ohmic Losses in the Semiconductors |
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110 | (3) |
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6.2.2.3 Ohmic Losses in the Metal Contacts |
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113 | (1) |
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114 | (8) |
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6.3.1 Antireflection Processes |
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114 | (6) |
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6.3.1.1 Antireflection Using a Thin Coating |
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115 | (3) |
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6.3.1.2 Textured Surfaces |
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118 | (2) |
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6.3.2 Losses due to Non-Absorbed Light |
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120 | (1) |
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6.3.3 Shadowing Losses by Contact Fingers |
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121 | (1) |
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6.4 The Structure of a High Efficiency Solar Cell |
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122 | (1) |
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6.5 Manufacturing Process for High Efficiency Silicon Solar Cells |
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123 | (10) |
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6.5.1 Process Sequence for the Highest Efficiency |
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124 | (4) |
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6.5.2 The Simplified Manufacturing Process |
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128 | (5) |
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7 Si Solar Cell Technology |
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133 | (30) |
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7.1 Technology for the Manufacture of Silicon |
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133 | (10) |
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133 | (2) |
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7.1.2 Refractioning Processes |
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135 | (1) |
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7.1.3 The Manufacture of Polycrystalline Si Material |
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135 | (1) |
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7.1.4 Crystal Pulling Process |
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136 | (3) |
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7.1.4.1 The Czochralski (CZ) Process |
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136 | (2) |
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7.1.4.2 Float Zone Pulling |
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138 | (1) |
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7.1.5 The Manufacture of Silicon Wafers |
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139 | (1) |
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7.1.6 Polycrystalline Silicon Material |
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139 | (2) |
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141 | (2) |
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142 | (1) |
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143 | (1) |
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7.2 Si Solar Cell Technology |
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143 | (20) |
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7.2.1 Technologies for the p-n Junction |
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144 | (8) |
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7.2.1.1 Diffusion Technologies and the Theory of Diffusion |
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144 | (4) |
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7.2.1.2 Diffusion Technologies |
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148 | (4) |
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7.2.2 Oxidation Technologies |
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152 | (3) |
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7.2.3 Auxiliary Technologies |
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155 | (1) |
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7.2.3.1 Etching and Cleaning Techniques |
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155 | (1) |
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156 | (1) |
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7.2.4 The Metallising of Solar Cells |
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156 | (3) |
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7.2.4.1 The Structuring of the Finger Grid |
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156 | (1) |
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7.2.4.2 High Vacuum Evaporation Technologies |
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157 | (1) |
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7.2.4.3 Thick Film Technology |
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158 | (1) |
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7.2.5 Antireflection Technologies |
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159 | (4) |
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7.2.5.1 Applying an Antireflection Coating |
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159 | (1) |
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7.2.5.2 The Manufacture of Textured Silicon Surfaces |
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160 | (3) |
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8 Selected Solar Cell Types |
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163 | (38) |
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8.1 Crystalline Silicon Solar Cells |
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163 | (18) |
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8.1.1 Crystalline Silicon Concentrator Cells |
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163 | (3) |
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8.1.2 Bifacial Solar Cells |
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166 | (1) |
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8.1.3 Buried Contact Solar Cells |
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166 | (2) |
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168 | (1) |
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8.1.5 Polycrystalline Silicon Solar Cells |
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169 | (2) |
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8.1.6 Crystalline Silicon Thin Film Cells |
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171 | (7) |
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8.1.6.1 Advantages and Requirements |
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171 | (2) |
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8.1.6.2 The Relationship between Electrical and Cell Parameters |
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173 | (3) |
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8.1.6.3 Manufacturing Technology for Si Thin Film Solar Cells |
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176 | (2) |
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8.1.7 Multilayer Silicon Solar Cells |
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178 | (3) |
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8.2 Thin Film Solar Cells |
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181 | (10) |
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8.2.1 Amorphous Silicon Solar Cells |
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181 | (4) |
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8.2.2 Gallium-Arsenide Solar Cells |
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185 | (4) |
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8.2.3 Cadmium-Telluride Solar Cells |
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189 | (1) |
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8.2.4 Copper-Indium-Diselenide Solar Cells |
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190 | (1) |
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191 | (2) |
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8.4 Dye-Sensitised Solar Cells |
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193 | (8) |
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9 Analysis and Measuring Techniques |
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201 | (30) |
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9.1 The Current-Voltage Characteristics |
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201 | (7) |
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9.1.1 Measuring the I-V Curve Under Illumination |
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202 | (1) |
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9.1.2 Measuring the Dark Current Characteristic |
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203 | (5) |
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9.1.2.1 Dependence of Efficiency on Radiation |
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205 | (1) |
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9.1.2.2 Dependence of Efficiency on Temperature |
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206 | (2) |
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9.2 Solar Cell Spectral Response |
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208 | (4) |
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9.2.1 Spectral Response of a Front Illuminated Solar Cell |
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208 | (2) |
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9.2.2 Spectral Response of a Back Surface Illuminated Solar Cell |
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210 | (2) |
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9.3 The PCVD Measurement Techniques |
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212 | (2) |
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214 | (3) |
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9.4.1 Determining the Emitter Saturation Current |
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215 | (2) |
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9.4.2 Determination of the Surface Recombination Velocity |
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217 | (1) |
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9.5 Microwave Detected Photocurrent Decay |
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217 | (3) |
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9.6 Modulated Charge Carrier Absorption |
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220 | (5) |
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9.7 Short Circuit Current Topography (LBIC) |
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225 | (2) |
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227 | (4) |
| Appendix A: List of Symbols |
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231 | (2) |
| Appendix B: Physical Constants, Selected Si Parameters at 300K |
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233 | (2) |
| Index |
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235 | |