Crystalline Silicon Solar Cells

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Edition: 1st
Format: Hardcover
Pub. Date: 1998-04-15
Publisher(s): Wiley
List Price: $325.92

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Summary

As environmental concerns escalate, solar power is increasingly seen as an attractive alternative energy source. Crystalline Silicon Solar Cells addresses the practical and theoretical issues fundamental to the viable conversion of sunlight into electricity. Written by three internationally renowned experts, this valuable reference profits from results and experience gained from research at the Fraunhofer Institute for Solar Energy Systems. Features include: Introduction to the principles of photovoltaics, providing a grounding in semiconductor physics for the novice reader Special emphasis on the methods of attaining high efficiency and thereby cost-effective solar power Examination of the physics, design and technology of crystalline silicon solar cells, in particular thin film cells Survey of a selection of alternative cell types equipping the reader with a complete overview Detailed description of measuring and analysis techniques to facilitate determining physical semiconductor and solar cell parameters Accessible to those with a basic knowledge of physics and mathematics, this is an excellent introductory book for students studying solid state and semiconductor physics. All those working in photovoltaic development and production will find Crystalline Silicon Solar Cells an indispensable resource.

Author Biography

Adolf Goetzberger is a German physicist. Joachim Knobloch is the author of Crystalline Silicon Solar Cells, published by Wiley.

Table of Contents

Preface xi(4)
About the Authors xv
1 Photovoltaics
1(4)
1.1 The Principles of Photovoltaics
1(1)
1.2 The History of Photovoltaics
1(2)
1.3 The Importance of Photovoltaics
3(2)
2 Solar Power
5(4)
2.1 The Sun as a Source of Radiation
5(1)
2.2 Standard Radiation
6(3)
3 The Principles of Photovoltaics
9(40)
3.1 Crystalline Structure and the Energy Band Diagram for Semiconductors
9(11)
3.1.1 The Energy Band Diagram for Tetrahedronal Semiconductors
10(4)
3.1.2 Electrons and Holes in a Semiconductor
14(1)
3.1.3 Energy Levels: the Fermi Level
14(2)
3.1.4 Density of States for Electrons and Holes
16(3)
3.1.5 Thermal Equilibrium
19(1)
3.2 The Conduction Mechanism in Semiconductors
20(9)
3.2.1 Intrinsic Conduction, Field Current and Mobility
20(4)
3.2.2 Impurity Conduction
24(3)
3.2.3 Diffusion Current and Diffusion Constant
27(2)
3.3 The Generation of Charge Carriers by the Absorption of Light
29(5)
3.3.1 Absorption in Semiconductors
30(4)
3.3.1.1 Absorption in Direct Semiconductors
30(2)
3.3.1.2 Absorption in Indirect Semiconductors
32(2)
3.4 Recombination, Carrier Lifetime
34(10)
3.4.1 Radiative Recombination
35(1)
3.4.2 Auger Recombination
36(1)
3.4.3 Recombination via Defect Levels
37(5)
3.4.4 Recombination by Doping
42(2)
3.5 Basic Equations of Semiconductor Device Physics
44(5)
3.5.1 The Current Density Equations
44(1)
3.5.2 Poisson's Equation
45(1)
3.5.3 The Continuity Equations
45(4)
4 The p-n Junction
49(18)
4.1 Basic Equations
49(1)
4.2 Space Charge Region
50(9)
4.2.1 Potential Difference
51(3)
4.2.2 Electric Field and Electric Potential
54(3)
4.2.3 Space Charge Region Width and Capacitance
57(2)
4.3 The Biased p-n Junction
59(8)
4.3.1 The p-n Junction with Low Recombination and Weak Injection
60(1)
4.3.2 Forward Current Characteristic and Saturation Current
61(6)
5 The Physics of Solar Cells
67(20)
5.1 The Illuminated Infinite p-n Junction
67(5)
5.1.1 The Current-Voltage Characteristic of an Infinite Solar Cell
69(3)
5.1.1.1 Short Circuit Current
69(1)
5.1.1.2 Open Circuit Voltage
70(1)
5.1.1.3 Fill Factor
71(1)
5.1.1.4 Efficiency
71(1)
5.2 Real Solar Cells
72(15)
5.2.1 Photocurrents in a Real Solar Cell
73(3)
5.2.1.1 Photocurrent from the Base
73(2)
5.2.1.2 Photocurrent from the Emitter
75(1)
5.2.1.3 Photocurrent from the Space Charge Region
76(1)
5.2.2 Saturation Currents in a Real Solar Cell
76(3)
5.2.2.1 Saturation Current from the Base
76(2)
5.2.2.2 Saturation Current from the Emitter
78(1)
5.2.3 Ohmic Resistance in Real Solar Cells
79(1)
5.2.3.1 Shunt Resistance (R(p))
79(1)
5.2.3.2 Series Resistance (R(s))
79(1)
5.2.4 The Two Diode Model
79(8)
5.2.4.1 Equivalent Circuit of a Real Solar Cell
81(2)
5.2.4.2 The Influence of Ohmic Resistances
83(4)
6 High Efficiency Solar Cells
87(46)
6.1 The Significance of High Efficiency
87(3)
6.2 Electrical Losses
90(24)
6.2.1 Recombination Losses
90(12)
6.2.1.1 Recombination Losses in the Base
90(5)
6.2.1.2 Photocurrent and Saturation Current from the Emitter
95(3)
6.2.1.3 The Influence of Base Doping
98(3)
6.2.1.4 Recombination in the Space Charge Region
101(1)
6.2.2 Ohmic Resistance Losses
102(12)
6.2.2.1 Contact Resistance Metal-Semiconductor
103(7)
6.2.2.2 Ohmic Losses in the Semiconductors
110(3)
6.2.2.3 Ohmic Losses in the Metal Contacts
113(1)
6.3 Optical Losses
114(8)
6.3.1 Antireflection Processes
114(6)
6.3.1.1 Antireflection Using a Thin Coating
115(3)
6.3.1.2 Textured Surfaces
118(2)
6.3.2 Losses due to Non-Absorbed Light
120(1)
6.3.3 Shadowing Losses by Contact Fingers
121(1)
6.4 The Structure of a High Efficiency Solar Cell
122(1)
6.5 Manufacturing Process for High Efficiency Silicon Solar Cells
123(10)
6.5.1 Process Sequence for the Highest Efficiency
124(4)
6.5.2 The Simplified Manufacturing Process
128(5)
7 Si Solar Cell Technology
133(30)
7.1 Technology for the Manufacture of Silicon
133(10)
7.1.1 Basic Material
133(2)
7.1.2 Refractioning Processes
135(1)
7.1.3 The Manufacture of Polycrystalline Si Material
135(1)
7.1.4 Crystal Pulling Process
136(3)
7.1.4.1 The Czochralski (CZ) Process
136(2)
7.1.4.2 Float Zone Pulling
138(1)
7.1.5 The Manufacture of Silicon Wafers
139(1)
7.1.6 Polycrystalline Silicon Material
139(2)
7.1.7 Sheet Materials
141(2)
7.1.7.1 The EFG Process
142(1)
7.1.7.2 The SSP Process
143(1)
7.2 Si Solar Cell Technology
143(20)
7.2.1 Technologies for the p-n Junction
144(8)
7.2.1.1 Diffusion Technologies and the Theory of Diffusion
144(4)
7.2.1.2 Diffusion Technologies
148(4)
7.2.2 Oxidation Technologies
152(3)
7.2.3 Auxiliary Technologies
155(1)
7.2.3.1 Etching and Cleaning Techniques
155(1)
7.2.3.2 Photolithography
156(1)
7.2.4 The Metallising of Solar Cells
156(3)
7.2.4.1 The Structuring of the Finger Grid
156(1)
7.2.4.2 High Vacuum Evaporation Technologies
157(1)
7.2.4.3 Thick Film Technology
158(1)
7.2.5 Antireflection Technologies
159(4)
7.2.5.1 Applying an Antireflection Coating
159(1)
7.2.5.2 The Manufacture of Textured Silicon Surfaces
160(3)
8 Selected Solar Cell Types
163(38)
8.1 Crystalline Silicon Solar Cells
163(18)
8.1.1 Crystalline Silicon Concentrator Cells
163(3)
8.1.2 Bifacial Solar Cells
166(1)
8.1.3 Buried Contact Solar Cells
166(2)
8.1.4 MIS Solar Cells
168(1)
8.1.5 Polycrystalline Silicon Solar Cells
169(2)
8.1.6 Crystalline Silicon Thin Film Cells
171(7)
8.1.6.1 Advantages and Requirements
171(2)
8.1.6.2 The Relationship between Electrical and Cell Parameters
173(3)
8.1.6.3 Manufacturing Technology for Si Thin Film Solar Cells
176(2)
8.1.7 Multilayer Silicon Solar Cells
178(3)
8.2 Thin Film Solar Cells
181(10)
8.2.1 Amorphous Silicon Solar Cells
181(4)
8.2.2 Gallium-Arsenide Solar Cells
185(4)
8.2.3 Cadmium-Telluride Solar Cells
189(1)
8.2.4 Copper-Indium-Diselenide Solar Cells
190(1)
8.3 Tandem Solar Cells
191(2)
8.4 Dye-Sensitised Solar Cells
193(8)
9 Analysis and Measuring Techniques
201(30)
9.1 The Current-Voltage Characteristics
201(7)
9.1.1 Measuring the I-V Curve Under Illumination
202(1)
9.1.2 Measuring the Dark Current Characteristic
203(5)
9.1.2.1 Dependence of Efficiency on Radiation
205(1)
9.1.2.2 Dependence of Efficiency on Temperature
206(2)
9.2 Solar Cell Spectral Response
208(4)
9.2.1 Spectral Response of a Front Illuminated Solar Cell
208(2)
9.2.2 Spectral Response of a Back Surface Illuminated Solar Cell
210(2)
9.3 The PCVD Measurement Techniques
212(2)
9.4 The PCD Method
214(3)
9.4.1 Determining the Emitter Saturation Current
215(2)
9.4.2 Determination of the Surface Recombination Velocity
217(1)
9.5 Microwave Detected Photocurrent Decay
217(3)
9.6 Modulated Charge Carrier Absorption
220(5)
9.7 Short Circuit Current Topography (LBIC)
225(2)
9.8 The DLTS Process
227(4)
Appendix A: List of Symbols 231(2)
Appendix B: Physical Constants, Selected Si Parameters at 300K 233(2)
Index 235

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